N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：231.19 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：222.39 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道 PowerTrench® MOSFET 100V，4.4A，60mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大程度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 •最大 rDS(on) = 60 mΩ（VGS = 10 V、ID = 4.4 A）\n•最大 rDS(on) = 80 mΩ（VGS = 6.0 V、ID = 3.8 A）\n•低密勒电荷\n•低 QRR体二极管\n•优化高频率时的效率\n•UIS 能力（单脉冲和重复脉冲）以前的开发类型 82744\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：222.39 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

文件：379.58 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司