N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC

文件：280.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

文件：299.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

文件：258.399 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m廓

文件：338.09 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N 沟道 PowerTrench® MOSFET 60V，80A，3.8mΩ

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ •RDS(on) = 3.5mΩ （典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 96nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101 标准;

ONSEMI

安森美半导体