首页 >FDFMA2P029ZMOS()>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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P-ChannelMOSFET Features MOSFET •MaxrDS(on)=95matVGS=–4.5V,ID=–3.1A •MaxrDS(on)=141matVGS=–2.5V,ID=–2.5A •HBMESDProtectionLevel>2.5kV(Note1) Schottky •VF | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IntegratedP-ChannelPowerTrench짰MOSFETandSchottkyDiode.20V,.3.1A,95m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
IntegratedP-ChannelPowerTrenchMOSFETandSchottkyDiode-20V,-3.1A,95mohm GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultraportableapplications.ItfeaturesaMOSFETwithverylowonstateresistanceandanindependentlyconnectedlowforwardvoltageschottkydiodeall | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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