丝印：FDD8453LZ；Package：D-PAK；N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

General Description This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener haS been added to enhance ESD voltage level. Features - Typ rDS(on) = 5mΩ at VGS

文件：510.1 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

文件：2.17888 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 40V, 50A, 6.7m廓

文件：276.87 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel Power Trench짰 MOSFET

文件：417.97 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

文件：417.97 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N 沟道，Power Trench® MOSFET，40V，50A，6.7mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻而定制的。 旨在为增强ESD电压电平而增加了G-S齐纳管。 •VGS = 10V，ID = 15A时，Max rDS(on) = 6.7mΩ\n•VGS = 10V，ID = 15A时，Max rDS(on) = 6.7mΩ\n•HBM静电放电保护等级为>7kV，典型值（注4）\n•符合RoHS标准;

ONSEMI

安森美半导体