FDD306P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28mΩ@VGS=–4.5VRDS(ON)=41mΩ@VGS=–2.5VRDS(ON)=90mΩ@VGS=–1.8V ■Fast

FDD306P

P-channel Enhancement Mode Power MOSFET

Features VDS=-30V,ID=-20A RDS(ON)

FDD30U60J1

ULTRAFAST RECOVERY RECTIFIER

DESCRIPTION Plasticpackagehasunderwriterslaboratoryflammability classification94V-0 LeadfreeincomplywithEURoHS2011/65/EUdirectives Lowreverseleakagecurrent Ultrafastrecoverytimeandsoftrecoverycharacteristics Lowrecoveryloss

FDD3510H

Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

GeneralDescription ThesedualNandP-ChannelenhancementmodePowerMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features Q1:N-Channel

FDD3570

80V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •10A,80V.RDS(ON)=20mΩ@VGS=10V RDS(ON)=23mΩ@VGS

FDD3570

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=43A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3570

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=40A RDS(ON)

FDD3580

80V N-Channel PowerTrench??MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. ThisMOSFETfeaturesfasterswitchingandlowergatechangethanotherMOSFETswithcomparableRDS(ON

FDD3580

80V N-Channel PowerTrench??MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. ThisMOSFETfeaturesfasterswitchingandlowergatechangethanotherMOSFETswithcomparableRDS(ON

FDD3580

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=29mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3670

100V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •34A,100V.RDS(ON)=32mΩ@VGS=10V RDS(ON)=35mΩ@

FDD3672

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?

Features •rDS(ON)=24mΩ(Typ.),VGS=10V,ID=44A •Qg(tot)=24nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/D

FDD3672

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3680

100V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •25A,100V.RDS(ON)=46mΩ@VGS=10VRDS(ON)=51mΩ@VGS=6V •Lowgatecharge

FDD3680

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3682

N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectur

FDD3682

isc N-Channel MOSFET Transistor

•DESCRITION •DC-DCConvertersandoff-lineUPS •HighVoltageSynchronousRectifier •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤36mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

FDD3682-F085

N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 •RoHSCompliant Applications •DC/DCconvertersandOff-LineUPS •Distribut

FDD3690

100V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •22A,100V.RDS(ON)=64mΩ@VGS=10VRDS(ON)=71mΩ@VGS=6V •Lowgatecharge

FDD3690

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=64mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.