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FDD10N20LZ

Uninterruptible Power Supply

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD10N20LZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD10N20LZTM

Uninterruptible Power Supply

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10N20

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

10N20C

200VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EC-10N20

HIGHPOWER125WHIGHQUALITYAUDIOAMPLIFIERAPPLICATIONS

[EXICON] NANDPCHANNELLAERALMOSFETS

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ECX10N20

NCHANNELLATERALMOSFET

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

FDD10N20LZTM

UninterruptiblePowerSupply

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FLX10N20

HighVoltagePowerSupplies

TDKTDK Corporation

东电化(中国)投资有限公司

FQ10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB10N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB10N20C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB10N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB10N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD10N20

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD10N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD10N20C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD10N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FDD10N20L

  • 功能描述:

    MOSFET 200V N-Channel MOSFET, UniFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2024+原装现货
TO252
8950
BOM配单专家,发货快,价格低
询价
FAIRCHILD
23+
TO-2523L(
12300
全新原装真实库存含13点增值税票!
询价
ON/安森美
TO252
7906200
询价
FCS
2020+
TO-252
100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAI
2018+
TO252
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
FAIRCHI
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
询价
FAIRCHILD
22+23+
TO252
7365
绝对原装正品全新进口深圳现货
询价
FAIRCHI
21+
TO-252
12588
原装正品,自己库存 假一罚十
询价
VB
2019
D-PAK
55000
绝对原装正品假一罚十!
询价
Fairchild仙童/飞兆
2020+
TO-252
35990
公司代理品牌,原装现货超低价清仓!
询价
更多FDD10N20L供应商 更新时间2024-6-11 16:36:00