FDC2114EVM

包装：散装 功能：电容数字转换器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL MOD TWO CAP SENSORS

FDC2114RGHR

Capacitance-to-DigitalConverterforProximityLevelSensingApplications

FDC2114RGHR

EMI-Resistant28-Bit,12-BitCapacitance-to-DigitalConverter

FDC2114RGHT

EMI-Resistant28-Bit,12-BitCapacitance-to-DigitalConverter

FDC2114RGHT

Capacitance-to-DigitalConverterforProximityLevelSensingApplications

FH2114

RFPowerMOSFETTransistor75W,30-90MHz,24V

Features •N-Channelenhancementmodedevice •MeetsCECOMdrawingA3012711 •Designedforfrequencyhoppingsystems •30-90MHz •Lowercapacitancesforbroadbandoperation •Lowernoisefigurethanbipolardevices

FH2114

RFMOSFETPowerTransistor,75W,24V30-90MHz

Features •N-ChannelEnhancementModeDevice •MeetsCECOMDrawingA3012711 •DesignedforFrequencyHoppingSystems •30-90MHz •LowerCapacitancesforBroadbandOperation •LowerNoiseFigureThanBipolarDevices

FSP2114

CMOSLOWDROPOUTREGULATORS

FTD2114K

EpitaxialplanartypeNPNsilicontransistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

GM2114

CMOSPOSITIVEVOLTAGEREGULATOR

Description TheGM2114seriesofpositive,linearregulatorsfeaturelowquiescentcurrent(30uAtyp.)withlowdropoutvoltage,makingthemidealforbatteryapplications. TheseruggeddeviceshavebothThermalShutdown,andCurrentFold-backtopreventdevicefailureunderthe“Worst”ofopera