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FDB9403

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=93A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9403L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9406

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9406_F085

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.8m廓

Features ■TyprDS(on)=1.31mΩatVGS=10V,ID=80A ■TypQg(tot)=107nCatVGS=10V,ID=80A ■UISCapability ■RoHSCompliant ■QualifiedtoAECQ101 Applications ■AutomotiveEngineControl ■PowertrainManagement ■SolenoidandMotorDrivers ■ElectronicSteering ■Integrated

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB9406L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9409

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9409L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB9403

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB9403-F085

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB9403L-F085

N-Channel Logic Level PowerTrench짰 MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDB9406L_F085

N-Channel Logic Level PowerTrench MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDB9409-F085

N-Channel PowerTrench짰 MOSFET40 V, 80 A, 3.5 m廓

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDB9409L

N-Channel Logic Level PowerTrench MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDB9409L_F085

N-Channel Logic Level PowerTrench MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FDB940

  • 功能描述:

    MOSFET 40V 110A 1.2m? N-Ch PowerTrench MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
-
8357
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
24+
TO-263
5000
全现原装公司现货
询价
FAIRCHI
21+
TO-263
12588
原装正品,自己库存 假一罚十
询价
VB
2019
TO263
55000
绝对原装正品假一罚十!
询价
FAIRCHILD
20+
TO-263
38900
原装优势主营型号-可开原型号增税票
询价
F
23+
TO263
10000
公司只做原装正品
询价
F
22+
TO263
6000
十年配单,只做原装
询价
VB
TO263
68900
原包原标签100%进口原装常备现货!
询价
F
23+
TO263
8400
专注配单,只做原装进口现货
询价
F
23+
TO263
8400
专注配单,只做原装进口现货
询价
更多FDB940供应商 更新时间2024-9-22 9:12:00