| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
30VN-ChannelMOSFET Features ·RDS(ON)=8mW（VGS=10V） ·RDS(ON)=10mW（VGS=4.5V） ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-channelAdvancedModePowerMOSFET Features VDS=40V,ID=150A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=84A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features • | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channelAdvancedModePowerMOSFET Features VDS=40V,ID=150A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channelAdvancedModePowerMOSFET Features VDS=40V,ID=150A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=59mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670SincludesanintegratedSchottkydiodeu | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
FDB6670AL
- 功能描述：
MOSFET N-Channel PowerTrench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-263 |
20300 |
ONSEMI/安森美原装特价FDB6670AL即刻询购立享优惠#长期有货 |
询价 | ||
FSC |
24+ |
TO-263 |
9800 |
一级代理/全新原装现货/长期供应! |
询价 | ||
FSC |
24+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO-263 |
4800 |
只做原厂渠道 可追溯货源 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
TO263 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
onsemi(安森美) |
24+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON/安森美 |
2410+ |
TO-263 |
12000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
9800 |
原厂原装假一赔十 |
询价 | ||
FAIRCHILD/仙童 |
12+P |
TO-263 |
4800 |
深圳原装进口无铅现货 |
询价 | ||
FAI |
24+ |
TO-252 |
95 |
询价 |
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