FDB2670

200V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforswitchingontheprimarysideintheisolatedDC/DCconverterapplication.Anyapplicationrequiringa200VMOSFETswithlowon-resistanceandfastswitchingwillbenefit. TheseMOSFETsfeaturefasterswitchingandlowe

FDB2670

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=19A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=130mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FDD2670

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •3.6A,200V.RDS(ON)=130mΩ@VGS=10V •Lowgatecharge •Fastswitchingspeed •

FDD2670

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD2670

N-channelEnhancementModePowerMOSFET

Features VDS=200V,ID=8A RDS(ON)