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FDD2572

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=54mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD2572

N-channelEnhancementModePowerMOSFET

Features VDS=150V,ID=40A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD2572

N-ChannelPowerTrenchMOSFET150V,29A,54m?

Features •rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A •Qg(tot)=26nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectures

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD2572-NL

N-Channel150V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FDMS2572

N-ChannelUltraFETTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDMS2572

N-ChannelUltraFETTrench짰MOSFET150V,27A,47m?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP2572

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP2572

STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY

GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F

TRIPATH

Tripath Technology Inc.

FDP2572

N-ChannelPowerTrenchMOSFET150V,29A,54m?

Features •rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A •Qg(tot)=26nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectures

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS2572

150V,0.047Ohms,4.9A,N-ChannelUltraFETTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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