首页 >FDB14N15>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
150VN-ChannelMOSFET Features •14A,150V,RDS(on)=0.21Ω@VGS=10V •Lowgatecharge(typical18nC) •LowCrss(typical22pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET Features •14A,150V,RDS(on)=0.21Ω@VGS=10V •Lowgatecharge(typical18nC) •LowCrss(typical22pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F | TRIPATH Tripath Technology Inc. | TRIPATH | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.8A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
150VNCHANNELMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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