首页 >FDB10AN06A0-NL>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelPowerTrenchMOSFET60V,50A,10.5m? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerTrenchMOSFET60V,75A,10.5m? Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerTrenchMOSFET60V,50A,10.5m? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channelEnhancementModePowerMOSFET Features VDS=60V,ID=50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrenchMOSFET60V,75A,10.5m? Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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