首页 >FDB10AN06A0-NL>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

10AN06A0

N-ChannelPowerTrenchMOSFET60V,50A,10.5m?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB10AN06A0

N-ChannelPowerTrenchMOSFET60V,75A,10.5m?

Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD10AN06A0

N-ChannelPowerTrenchMOSFET60V,50A,10.5m?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD10AN06A0Q

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP10AN06A0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP10AN06A0

N-ChannelPowerTrenchMOSFET60V,75A,10.5m?

Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格