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FMH28N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMH28N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Switch-ModeandResonant-ModePowerSupplies ·DC-DCConverters ·PFCCircuits ·ACandDCMotorDrives ·RoboticsandServoControls

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMH28N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMH28N50ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMH28N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMR28N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMR28N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FQA28N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA28N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •28.4A,500V,RDS(on)=0.16Ω@VGS=10V •Lowgatecharge(typical110nC) •LowCrss(typical60pF) •Fastswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA28N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=28.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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