HEB1073

GENERALPURPOSETRANSISTOR

ISF1073

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V APPLICATIONS ·Switch-ModeandResonant-ModePowerSupplies ·DC-DCConverters ·PFCCircuits ·ACandDCMotorDrives ·RoboticsandServo

KTA1073T

EPITAXIALPLANARPNPTRANSISTOR(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROL)

HIGHVOLTAGECONTROLAPPLICATIONS. PLASMADISPLAY,NIXIETUBEDRIVERAPPLICATIONS. CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS. FEATURES •HighVoltage:VCBO=-300V,VCEO=-300V •LowSaturationVoltage:VCE(sat)=-0.5V(Max.) •SmallCollectorOutputCapacitance:Cob=5.5pF(Typ.) •Comp

LT1073

MicropowerDC/DCConverterAdjustableandFixed5V,12V

LT1073

MicropowerDC/DCConverterAdjustableandFixed5V,12V

LT1073

MicropowerDC-DCConverterAjustableandFixed5V,12V

LT1073C

MicropowerDC-DCConverterAjustableandFixed5V,12V

NGR1073

NGRSERIES–CANADA,NeutralGroundingResistorSystem

Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar

NTE1073

IntegratedCircuitAM−RFAmplifier,Mis,OSCFM−IFAmplifier

IntegratedCircuitAM−RFAmplifier,Mis,OSCFM−IFAmplifier

PEWAN1073

GainHorns