首页 >FD1029PC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualP-ChannelPowerTrench짰MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualP-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice Features •LowON-resistance. •4Vdrive. •Mountingheight1.1mm. •Compositetype,facilitatinghigh-densitymounting. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
ELECTRICAL&MECHANICALSPECIFICATION FEATURES Graycoded,standardandcomplimentaryversions PCBTerminals +extrastabilisingterminals Standard22.5°indexing4-Bit Standard45°indexing3-Bit Adjustablestopstorestrictnumberofpositions Standardsilvercontacts,goldflashed Moulded27.5mmdiameter Spindl | LORLIN Lorlin Electronics Ltd. | LORLIN | ||
SiliconPChannelPowerMOSFETHighSpeedPowerSwitching Features •Lowon-resistance •Capableof2.5Vgatedrive •Lowdrivecurrent •Highdensitymounting | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
GaAspHEMTMMIC2WATTPOWERAMPLIFIER | Hittite Hittite Microwave Corporation | Hittite | ||
nullSafetyswitch,doublethrow,nonfusible,60A,600VAC/VDC,4poles,60hp,NEMA1 | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V APPLICATIONS ·CurrentRegulators ·SolidStateCircuitBreakers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LA-1029S | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
5VBandgapReference | LINERLinear Technology 凌力尔特凌特半导体 | LINER |
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