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FCH30B10

SchottkyBarrierDiode

NIEC

Nihon Inter Electronics Corporation

P30B10EL

PowerMOSFET

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

P30B10EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=30mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

P30B10EL

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

TCH30B10

SchottkyBarrierDiode

NIEC

Nihon Inter Electronics Corporation

TCH30B10

ScokktyBarrierDiode

SBD 30AAvg.100Volts

NIEC

Nihon Inter Electronics Corporation

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