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P25Q06LA-NXH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-NXH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SSH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SUH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SUH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SUH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q06LA-SUH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

供应商型号品牌批号封装库存备注价格
NIEC
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Panduit Corp
2010+
N/A
132
加我qq或微信,了解更多详细信息,体验一站式购物
询价
新电源
23+
2800
正品原装货价格低qq:2987726803
询价
NIEC
08+(pbfree)
TO-220F
8866
询价
NICE
23+
TO220
1567
专业优势供应
询价
NIEC英达
24+
TO-220F
5000
只做原装公司现货
询价
NIEC
23+
TO-220F
10000
专做原装正品,假一罚百!
询价
NEC
1926+
TO-220
6852
只做原装正品现货!或订货假一赔十!
询价
NIEC英达
20+
TO-220F
38560
原装优势主营型号-可开原型号增税票
询价
SHINDENGE
2023+
TO-220F
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多FCH25Q06供应商 更新时间2024-6-15 16:16:00