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FCH10A09

Schottky Barrier Diode

FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *DualDiodes–CathodeCommon *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

FSH10A09

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ACCase *FullyMoldedIsolation *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

FSH10A09B

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

GCH10A09

SchottkyBarrierDiode

NIEC

Nihon Inter Electronics Corporation

GSH10A09

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ACCase *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

GSH10A09B

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ABCase *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

ZXMN10A09K

100VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETfeatureslowon-resistance,fastswitchingandahighavalanchewithstandcapability,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •Powermanagementfunctions •Disconnectswitches •Motorcontrol

DIODESDiodes Incorporated

美台半导体

ZXMN10A09K

100VN-CHANNELENHANCEMENTMODEMOSFETINDPAK

SUMMARY V(BR)DSS=100V:RDS(on)=0.085;ID=7.7A DESCRIPTION ThisnewgenerationofTrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltagepowermanagementapp

Zetex

Zetex Semiconductors

ZXMN10A09KTC

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

ZXMN10A09KTC

100VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETfeatureslowon-resistance,fastswitchingandahighavalanchewithstandcapability,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •Powermanagementfunctions •Disconnectswitches •Motorcontrol

DIODESDiodes Incorporated

美台半导体

详细参数

  • 型号:

    FCH10A09

  • 制造商:

    NIEC

  • 制造商全称:

    Nihon Inter Electronics Corporation

  • 功能描述:

    Schottky Barrier Diode

供应商型号品牌批号封装库存备注价格
06+
TO-220
5000
原装
询价
NIEC
17+
TO-220F
6200
询价
NIEC
23+
TO-220F
10000
专做原装正品,假一罚百!
询价
POWER
23+
6000
专注配单,只做原装进口现货
询价
POWER
23+
6000
专注配单,只做原装进口现货
询价
日本
25+
TO
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NIEC
24+
TO-220F
10000
只做原装正品现货 欢迎来电查询15919825718
询价
NIEC
13+
7418
原装分销
询价
NIEC
24+
TO-220F
8866
询价
原厂正品
23+
TO-220F
5000
原装正品,假一罚十
询价
更多FCH10A09供应商 更新时间2025-7-13 9:17:00