N-Channel SuperFET짰 II FRFET짰 MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 54A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 77mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

MOSFET ??N-Channel, SUPERFET II, FRFET 650 V, 54 A, 77 m

Description SuperFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：425.08 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，54 A，77 mΩ，TO-247

SuperFET® II MOSFET 是 Fairchild 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可去除额外元件并提高系统可靠性。 •700 V @ TJ = 150°C\n•超低栅极电荷（典型值 Qg=126 nC）\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n;

ONSEMI

安森美半导体