FCD600N65S3R0中文资料安森美半导体数据手册PDF规格书

厂商型号	FCD600N65S3R0
功能描述	MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m
丝印标识	FCD600N65S3R0
封装外壳	D-PAK
文件大小	416.38 Kbytes
页面数量	10 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-2 23:00:00
人工找货	FCD600N65S3R0价格和库存，欢迎联系客服免费人工找货

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high

voltage super-junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on-resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

特性 Features

• 700 V @ TJ = 150°C

• Typ. RDS(on) = 493 m

• Ultra Low Gate Charge (Typ. Qg = 11 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)

• 100 Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

• Lighting / Charger / Adapter