首页 >FCB20N60TM>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FCB20N60TM | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
20A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS | ||
HITACHIEncapsulation,DIP16 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
FCB20N60TM
- 功能描述:
MOSFET HIGH_POWER
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi |
23+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ON(安森美) |
24+ |
D2PAK |
4800 |
只做原装/假一赔百 |
询价 | ||
onsemi(安森美) |
23+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
FAICHILD |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
FAI |
278 |
询价 | |||||
ONSemiconductor |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
FAIRCHILD |
22+23+ |
TO263 |
12584 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHILD |
1836+ |
TO-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
FAIRCHIL |
23+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
Fairchild/ONSemiconducto |
2019+ |
TO-263-3 |
65500 |
D2Pak(2Leads+Tab) |
询价 |
相关规格书
更多- FCB21K0J
- FCB290N80
- FCB-3020-SMT
- FCB-3051-UAS
- FCB-405-0521M
- FCB-405-0624M
- FCB410KJ
- FCB4150RJ
- FCB41K0J
- FCB41R0J
- FCB422RJ
- FCB42R2J
- FCB433RJ
- FCB4470RJ
- FCB44K7J
- FCB4680RJ
- FCB46K8J
- FCB4R33J
- FCB4R68J
- FCBG110SD1C01
- FCBG110SD1C03B
- FCBG110SD1C05B
- FCBG110SD1C10
- FCBG410QB1C03
- FCBG410QB1C10
- FCBG410QB1C20
- FCBGD10CD1C03
- FCBI1-S10-C20
- FCBN410QB1C01
- FCBN410QB1C10
- FCBN410QB1C20
- F-CBS-F1
- F-CBS-F5
- FCC-1
- FCC120-34
- FCC130-24
- FCC140-40
- FCC151-26
- FCC161-20
- FCC161-50
- FCC162-40
- FCC-16-3RT
- FCC170-20
- FCC170-40
- FCC17-A15AD-280
相关库存
更多- FCB21R0J
- FCB-3017-ULX
- FCB-3041-SMT
- FCB36N60NTM
- FCB-405-0622M
- FCB4100RJ
- FCB410RJ
- FCB415RJ
- FCB41K5J
- FCB4220RJ
- FCB42K2J
- FCB4330RJ
- FCB43R3J
- FCB447RJ
- FCB44R7J
- FCB468RJ
- FCB46R8J
- FCB4R47J
- FCB-AV-ASV2-LG02-A
- FCBG110SD1C03
- FCBG110SD1C05
- FCBG110SD1C07
- FCBG110SD1C20
- FCBG410QB1C05
- FCBG410QB1C15
- FCBG410QB1C30
- FCBI1-A-C20
- FCBI2-S10-C20
- FCBN410QB1C05
- FCBN410QB1C15
- FCBN410QB1C30
- F-CBS-F3
- F-CBS-F6
- FCC120-20
- FCC120-50
- FCC140-34
- FCC140-50
- FCC152-34
- FCC161-26
- FCC162-20
- FCC162-50
- FCC165-20
- FCC170-34
- FCC171-26
- FCC17-A15PA-450G