FAST RECOVERY BRIDGE RECTIFIERS

FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

文件：48.51 Kbytes 页数：2 Pages

EIC

FAST RECOVERY

文件：52.08 Kbytes 页数：2 Pages

EIC

25 AMP FAST RECOVERY BRIDGE RECTIFIERS

文件：459.29 Kbytes 页数：2 Pages

DEC

25 AMP FAST RECOVERY BRIDGE RECTIFIERS

文件：459.75 Kbytes 页数：2 Pages

DEC

Dual P-Channel 1.8 V Specified PowerTrench MOSFET

General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.

文件：135.26 Kbytes 页数：5 Pages

Fairchild

仙童半导体