丝印：FAD；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features · Wide Operating Voltage: 2.5V to 6V · Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · High Output Voltage Accuracy: ±2 · High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz · Low Standby Current: 0.1μA · Low Quiescent Current: 60μA Typical · Low Output

文件：861.57 Kbytes 页数：21 Pages

DIODES

美台半导体

丝印：FAD8253MX；Package：SOIC-14NB；Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

文件：348.99 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Ignition Gate Drive IC

Description The FAD1110−F085 is designed to directly drive an ignition IGBT and control the current and spark event of the coil. The coil current is controlled via the input pin. When the differential input is driven high, the output of the FAD1110−F085 is enabled to turn on the IGBT and star

文件：160.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

110 V 2.5 A Single Channel Floating Gate Drivers with Desaturation Protection and Charge Pump

The FAD3151MXA and FAD3171MXA are single channel floating automotive gate drivers suitable for driving high−speed power MOSFETs up to 110 V. Designed in a SOI technology, the drivers are ideal for applications that require noise immunity against severe negative transients and ground offset up

文件：210.74 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

110 V 2.5 A Single Channel Floating Gate Drivers with Desaturation Protection and Charge Pump

The FAD3151MXA and FAD3171MXA are single channel floating automotive gate drivers suitable for driving high−speed power MOSFETs up to 110 V. Designed in a SOI technology, the drivers are ideal for applications that require noise immunity against severe negative transients and ground offset up

文件：210.74 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver, 600 V, 3 A

Description The FAD6263 is a high voltage half bridge gate driver IC providing 2 complementary outputs for driving power MOSFETs or IGBTs in a half−bridge configuration. It uses the bootstrap technique to ensure a proper drive of the high−side power switch. The driver works with a single input.

文件：275.19 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver, 600 V, 3 A

Description The FAD6263 is a high voltage half bridge gate driver IC providing 2 complementary outputs for driving power MOSFETs or IGBTs in a half−bridge configuration. It uses the bootstrap technique to ensure a proper drive of the high−side power switch. The driver works with a single input.

文件：275.19 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

600 V / 4 A, High-Side Automotive Gate Driver IC

Description The FAD7171MX is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. onsemi’s high−volt

文件：154.53 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Automotive Gate Driver IC, High and Low Side 600 V, 4.5 A

Description The FAN7191 / FAD7191 is a monolithic high− and low−side gate−driver IC, which can drive high speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse driving capability and minimum cross−conduction. ON Se

文件：464.71 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

Automotive Gate Driver IC, High and Low Side 600 V, 4.5 A

Description The FAN7191 / FAD7191 is a monolithic high− and low−side gate−driver IC, which can drive high speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse driving capability and minimum cross−conduction. ON Se

文件：464.71 Kbytes 页数：14 Pages

ONSEMI

安森美半导体