丝印：F9540NS；Package：TO-263；P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

文件：3.53757 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel MOSFET Transistor

文件：334.83 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF