丝印：6617；Package：CSPB2217-6；Enhancement Mode Power MOSFET

DESCRIPTION The F6617SPK uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated

文件：1.17282 Mbytes 页数：5 Pages

GWSEMI

唯圣电子

Primary-Side-Regulation PWM with POWER MOSFET

文件：454.1 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

Primary-Side-Regulation PWM with POWER MOSFET

文件：454.1 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

文件：91.67 Kbytes 页数：7 Pages

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