Ka-Band SATCOM Transmitter IC

文件：163.95 Kbytes 页数：2 Pages

IDT

Ka-Band SATCOM Transmit SiGe IC

The F6502 is an 8-element transmitter silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM (27 to 31GHz) phased array applications. The core IC has 6-bit phase control coupled with more than 35dB gain control on each channel to achieve fine beam steering and gain compensation between r • 27–31GHz operation\n• 8 radiation elements\n• 20ns typical gain and phase settling time\n• 3° typical RMS phase error\n• 0.4dB typical RMS gain error\n• 35dB gain attenuation range\n• 5-bit chip address\n• Integrated PTAT with external biasing\n• Internal temperature sensor\n• Up to 50MHz SPI cont;

Renesas

瑞萨

Ka-Band SATCOM Transmitter IC

文件：163.95 Kbytes 页数：2 Pages

IDT

Ka-Band SATCOM Transmitter IC

文件：163.95 Kbytes 页数：2 Pages

IDT

Ka-Band SATCOM Transmitter IC

文件：163.95 Kbytes 页数：2 Pages

IDT

Ka-Band SATCOM Transmitter IC

文件：163.95 Kbytes 页数：2 Pages

IDT

Package：62-VFBGA，FCCSPBGA；包装：管件 类别：RF/IF，射频/中频和 RFID 射频发射器 描述：FCCSP 4.60X3.60X0.90 MM, 0.50MM

Renesas Electronics America Inc

Package：62-VFBGA，FCCSPBGA；包装：管件 类别：RF/IF，射频/中频和 RFID 射频发射器 描述：FCCSP 4.60X3.60X0.90 MM, 0.50MM

Renesas Electronics America Inc

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD

Renesas Electronics America Inc