首页 >F640FP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel2.5VSpecifiedPowerTrenchTMMOSFET GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–4.5A,–20VRDS(ON)=0.053Ω@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel2.5VPowerTrenchSpecifiedMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER | RECTRON Rectron Semiconductor | RECTRON | ||
ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype Features PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. Forsurfacemountedapplications. ExceedsenvironmentalstandardsofMIL-S-19500/228 Lowleakagecurrent. | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
18A,200V,0.155廓,N-CHANNELPOWERMOSFET | FS First Silicon Co., Ltd | FS | ||
18A,200V,0.155廓,N-CHANNELPOWERMOSFET | FS First Silicon Co., Ltd | FS | ||
18A,200V,0.155廓,N-CHANNELPOWERMOSFET | FS First Silicon Co., Ltd | FS | ||
18A,200V,0.155廓,N-CHANNELPOWERMOSFET | FS First Silicon Co., Ltd | FS | ||
lowvoltage,highfrequencyinverter, | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
TheGBG640CTisdesignedforlowvoltage,highfrequencyinverter,freewheeling,andpolarityprotectionapplication | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL |
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