首页 >F6409>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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CMOSManchesterEncoder-Decoder Description TheHD-6409ManchesterEncoder-Decoder(MED)isahighspeed,lowpowerdevicemanufacturedusingself-alignedsilicongatetechnology.Thedeviceisintendedforuseinserialdatacommunication,andcanbeoperatedineitheroftwomodes.Intheconvertermode,theMEDconvertsNo | Intersil Intersil Corporation | Intersil | ||
CMOSManchesterEncoder-Decoder •ThisCircuitisProcessedinAccordancetoMIL-STD883andisFullyConformantUndertheProvisionsof Paragraph1.2.1. •ConverterorRepeaterMode •IndependentManchesterEncoderandDecoder Operation •StatictoOneMegabit/SecDataRateGuaranteed •LowBitErrorRate •DigitalPLLCl | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSManchesterEncoder-Decoder Description TheHD-6409ManchesterEncoder-Decoder(MED)isahighspeed,lowpowerdevicemanufacturedusingself-alignedsilicongatetechnology.Thedeviceisintendedforuseinserialdatacommunication,andcanbeoperatedineitheroftwomodes.Intheconvertermode,theMEDconvertsNo | Intersil Intersil Corporation | Intersil | ||
CMOSManchesterEncoder-Decoder | Intersil Intersil Corporation | Intersil | ||
CMOSManchesterEncoder-Decoder | Intersil Intersil Corporation | Intersil | ||
CMOSManchesterEncoder-Decoder | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSManchesterEncoder-Decoder TheHD-6409ManchesterEncoder-Decoder(MED)isahigh speed,lowpowerdevicemanufacturedusingself-aligned silicongatetechnology.Thedeviceisintendedforusein serialdatacommunication,andcanbeoperatedineitherof twomodes.Intheconvertermode,theMEDconvertsNon return-t | Intersil Intersil Corporation | Intersil | ||
P-ChannelEnhancementModePowerMOSFET Description TheHM6409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-5.0A RDS(ON) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
20VP-ChannelEnhancement-ModeMOSFET VDS=-20V RDS(ON),Vgs@-1.8V,Ids@-2.0A=73mΩ RDS(ON),Vgs@-2.5V,Ids@-4.0A=54mΩ RDS(ON),Vgs@-4.5V,Ids@-5.5A=43mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance PackageDimensions | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
MR11andMR16HalogenLampswithGoldCoatedReflectors HighIntensityInfraredSource SeverallampsinourMR11andMR16seriesarenowavailablewithgoldcoatedreflectors.Thislayerofgoldprovidesforincreasedemissionintheinfrared. ApplicationsincludeopenfieldIRgasdetection,localinfraredheatingandremotetestingofflamedetect | GILWAY Gilway Technical Lamp | GILWAY |
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