F337R

HCMOS 3.2x2.5mm 3.3V SMD Oscillator

FDN337

N-Channel30V(D-S)MOSFET

Features HighdensitycelldesignforextremelylowRDS(ON). Exceptionalon-resistanceandmaximumDCcurrentcapability. VDS(V)=30V D=2.2A(VGS=4.5V) RDS(ON)

FDN337N

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription SuperSOTTM-3N-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticular

FDN337N

ContainsallsupportcircuitryneededfortheADS1146/ADS1246

FDN337N

ContainsallsupportcircuitryneededfortheADS1148/ADS1248

FDN337N

N-Channel30V(D-S)MOSFET

Features HighdensitycelldesignforextremelylowRDS(ON). Exceptionalon-resistanceandmaximumDCcurrentcapability. VDS(V)=30V D=2.2A(VGS=4.5V) RDS(ON)

FDN337N

N-ChannelMOSFET

Features VDS(V)=30V ID=2.2A RDS(ON)=0.065Ω@VGS=4.5V RDS(ON)=0.082Ω@VGS=2.5V

FDN337N-NL

N-Channel30-V(D-S)MOSFET

FRW337

SAWResonator-RemoteControl

GBC337

NPNSILICONTRANSISTOR

Description TheGBC337isdesignedfordriveandoutput-stagesofaudioamplifiers. Features HighDCCurrentGain:100~630@VCE=1V,IC=100mA ComplementarytoGBC327