ESD and Surge Protection Device, Bidirectional

Features  Low Capacitance 1.4 pF (Typ)  Low Clamping Voltage  Small Body Outline Dimensions: 1.00 mm x 0.60 mm  Low Body Height: 0.23 mm  Stand−off Voltage: 14 V  Protection for the following IEC Standards: IEC61000−4−2 Level 4: 30 kV Contact Discharge IEC61000−4−5 (Lightning): IPP

文件：321.16 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

14 V / 5 V Bidirectional Asymmetrical Low Capacitance ESD Protection Diode for High Speed Data Lines, customized for USB Type C Alternate Audio Mode Applications

The ESDL3141 ESD protection diode is designed to protect high speed data lines from ESD. Low capacitance, high peak pulse current capabilities and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. In addition, the 14 V working voltage • 14 V Working Voltage\n• Protects against shorts to the Vbus line\n• Fc = 3.3 GHz\n• Suitable for high speed data line protection\n• High Power Density. 10 A Peak Pulse Current Capability\n• Survives and Protects against high electrical overstress events\n• Low Clamping Voltage: 23 V @ 10 A (8x20 u;

ONSEMI

安森美半导体

ESD and Surge Protection Device, Bidirectional

Features  Low Capacitance 1.4 pF (Typ)  Low Clamping Voltage  Small Body Outline Dimensions: 1.00 mm x 0.60 mm  Low Body Height: 0.23 mm  Stand−off Voltage: 14 V  Protection for the following IEC Standards: IEC61000−4−2 Level 4: 30 kV Contact Discharge IEC61000−4−5 (Lightning): IPP

文件：321.16 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：2-XDFN；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：ASYMMETRIC LOW CAP SURGE PROTECT

ONSEMI

安森美半导体