ESD3D3V3B1S401H中文资料瞬芯半导体数据手册PDF规格书

描述 Description

The ESD3D3V3B1S401H protects sensitive

semiconductor components from damage or upset

due to electrostatic discharge (ESD) and other

voltage induced transient events. They feature

large cross-sectional area junctions for conducting

high transient currents, offer desirable electrical

characteristics for board level protection, such as

fast response time, low operating voltage. It gives

designer the flexibility to protect one bi-directional

line in applications where arrays are not practical.

Feature

350W peak pulse power per line (tP = 8/20μs)

SOD-323 package

Replacement for MLV(0805)

Bidirectional configurations

Protects one power or I/O port

Low clamping voltage

RoHS compliant

Transient protection for data lines to IEC 61000-4-2(ESD)

±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Laptop computers

Cellular phones

Digital cameras

PDAs

Applications