金属（氧化物）覆膜固定电阻器

Panasonic

松下

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Applications

文件：180.27 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V)

Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON)= 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −200 V) • Enhancement mode: Vth= −1.5 to −3

文件：219.82 Kbytes 页数：5 Pages

TOSHIBA

东芝