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EPC9055

包装:盒 功能:半 H 桥驱动器(外部 FET) 类别:开发板,套件,编程器 评估和演示板及套件 描述:BOARD DEV FOR EPC2106

EPCEPC(Efficient Power Conversion)

宜普宜普电源转换公司 EPC(Efficient Power Conversion)

FSJ9055D

55A,-60V,0.029Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ9055R

55A,-60V,0.029Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSTJ9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTJ9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTYC9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTYC9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSYC9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYC9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

K9055RED

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ETCList of Unclassifed Manufacturers

未分类制造商

ML9055A

LCDController/Driver

GENERALDESCRIPTION TheML9055A-02isanLSIprovidingthebitmapdisplayonadotmatrixgraphicLCDpanel.Withonechip,itispossibletoconstructagraphicdisplaysystemwithamaximumof128×128dots.SinceallthefunctionsnecessaryfordrivingthebitmaptypeLCDpanelareincorpo

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

RT9055

300mADualLDORegulator

GeneralDescription TheRT9055isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Theoutputvoltagerangeisfrom0.9Vto3.5Vwithaninputvoltagerangefrom1.5Vto5.5V. Features •WideOperatingVoltageRange:1.5Vto5.5V •LowNoiseforRFAp

RichTekRichtek Technology Corporation

台湾立绮立绮科技

RT9055-NGWSC

TheRT9055isadualchannel

RichTekRichtek Technology Corporation

台湾立绮立绮科技

S9055

SiPINphotodiodeFlatresponsecharacteristicsuptohighfrequencybands

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SM-BGA-9055

Easilyremovalbeswivelsocketlid

IRONWOOD

Ironwood Electronics.

产品属性

  • 产品编号:

    EPC9055

  • 制造商:

    EPC

  • 类别:

    开发板,套件,编程器 > 评估和演示板及套件

  • 系列:

    eGaN®

  • 包装:

  • 类型:

    电源管理

  • 功能:

    半 H 桥驱动器(外部 FET)

  • 嵌入式:

  • 使用的 IC/零件:

    EPC2106

  • 主要属性:

    100V,3A 最大输出 GaNFET 功率

  • 所含物品:

  • 描述:

    BOARD DEV FOR EPC2106

供应商型号品牌批号封装库存备注价格
EPC
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
EPCC
23+
晶体管-FET/MOSFET
5864
原装原标原盒 给价就出 全网最低
询价
更多EPC9055供应商 更新时间2024-9-24 10:08:00