EN7379A

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP

BipolarTransistor -50V,-3A,LowVCE(sat),PNPSingleNMP Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applicaitons •DC-DCconverter,relaydrivers,lampdrivers,motordrivers,strobes

EN7379A

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP;

EN7379A

High Current Switching Applications

FP7379

RFAMPLIFIERMODEL

FP7379PM

RFAMPLIFIERMODEL

IRF7379

PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide