1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either

文件：425.66 Kbytes 页数：31 Pages

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1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

文件：1.2635 Mbytes 页数：32 Pages

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1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION\nThe EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either sin • Single power supply operation\n- Full voltage range: 2.7-3.6 volt\n• Serial Interface Architecture\n- SPI Compatible: Mode 0 and Mode 3\n• 1 Mbit Serial Flash\n- 1 M-bit/128 K-byte/512 pages\n- 256 bytes per programmable page\n• High performance\n- 100MHz clock rate\n• Low power consumption\n- 12 ;

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1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either

文件：425.66 Kbytes 页数：31 Pages

EON

宜扬科技

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either

文件：425.66 Kbytes 页数：31 Pages

EON

宜扬科技

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either

文件：425.66 Kbytes 页数：31 Pages

EON

宜扬科技

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

GENERAL DESCRIPTION The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either

文件：425.66 Kbytes 页数：31 Pages

EON

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1 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

GENERAL DESCRIPTION The EN25F10A is a 1 Megabit (128 K-byte) Serial Flash memory, with enhanced write protection mechanisms. The EN25F10A supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip

文件：1.08643 Mbytes 页数：62 Pages

EON

宜扬科技

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

文件：1.2635 Mbytes 页数：32 Pages

EON

宜扬科技

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

文件：1.2635 Mbytes 页数：32 Pages

EON

宜扬科技