EMB20N03Q

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)22mΩ ID6A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB20N03V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)20mΩ ID12A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB20N03VA

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)20mΩ ID7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB20N03VAT

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)20mΩ ID7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB20N03VL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FQ20N03Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ20N03QcombinesadvancedtrenchMOSFETtechnology withalowresistancepackagetoprovideextremelylowRDS(ON).This deviceisidealforloadswitchandbatteryprotectionapplications APPLICATIONS Batteryprotectionapplications Loadswitch

G20N03K

N-ChannelEnhancementModePowerMOSFET

Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters

GE20N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GE20N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GI20N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET