Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary: ▪ Pin Description: N-CH 100V 5.5mΩ 7.5mΩ 122.0A 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

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EXCELLIANCE

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Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ05N10Q uses advanced trench technology and design to p rovide excellent RDS(ON) This device is suitable for use in a wide variety of applications. with low gate charge. FEATURES Lead free product is acquired Special process technology for high ESD capability High dens

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N-Channel Enhancement Mode Power MOSFET

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