EMA

包装：盒 类别：焊接，拆焊，返修产品 焊接，拆焊，返修尖头，喷嘴 描述：TIP REPLACEMENT CHISEL .062\

EMA

包装：散装 封装/外壳：20-DIP 模块 类别：RF/IF，射频/中频和 RFID 射频收发器模块和调制解调器 描述：LTE EMBEDDED CELLULAR MODEM

OptConnect Management, LLC

EMA04N03A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS25V RDSON(MAX.)4mΩ ID80A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMA06N03CS

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS25V RDSON(MAX.)6mΩ ID80A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMA09N03AN

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS25V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMA09N03CS

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS25V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMA2

Emitter common (dual digital transistors)

Features 1)TwoDTA144EtransistorsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf.

EMA2

Built-In Biasing Resistors, R1 = R2 = 47kW.

Features 1)TwoDTA144EtransistorsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf.

EMA2

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)TwoDTA144EtransistorsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf.

EMA2

Emitter common Dual digital transistors

Features 1)TwoDTA144EtransistorsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf.

EMA205B

9-16 GHz Medium Power MMIC

FEATURES •9-16GHzBANDWIDTH •+18.0dBmTYPICALOUTPUTPOWER •14dB±1.5dBTYPICALPOWERGAIN •TWOSECTION,DISTRIBUTEDAMPLIFIER •DUALBIASSUPPLY •0.3MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALHETEROJUNCTIONPROFILEPROVIDESEXTRAHIGHPOWEREFFICIE

EMA20N03A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS25V RDSON(MAX.)20mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMA3

Emitter common (dual digital transistors)

Features 1)TwoDTA143TchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER

EMA3

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)TwoDTA143TchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER

EMA3

Emitter common Dual digital transistor

Features 1)TwoDTA143TchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER

EMA303D-2

19.5 - 24 GHz Medium Power MMIC

FEATURES •19.5-24GHzBANDWIDTH •+22dBmOUTPUTPOWER@1dBGainCompression •22dBTYPICALSMALLSIGNALGAIN •DUALBIASSUPPLY •0.3MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALHETEROJUNCTIONPROFILEPROVIDESEXTRAHIGHPOWEREFFICIENCY,ANDHIGHREL

EMA4

General purpose (dual digital transistors)

Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA114TchipsinaEMTorUMTorSMTpackage.

EMA4

General purpose (dual digital transistors)

Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA114TchipsinaEMTorUMTorSMTpackage.

EMA4

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors

Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA114TchipsinaEMTorUMTorSMTpackage.

EMA406C

26 - 32 GHz Low Noise MMIC

FEATURES •26-32GHzBANDWIDTH •+20.0dBmTYPICALOUTPUTPOWER •21dB±1.5dBTYPICALPOWERGAIN •FOURSECTION,DISTRIBUTEDAMPLIFIER •DUALBIASSUPPLY •0.3MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALHETEROJUNCTIONPROFILEPROVIDESEXTRAHIGHPO