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IRF9530

SEMICONDUCTORS

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IRF9530

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半导体

IRF9530

iscP-ChannelMosfetTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9530

12A,100V,0.300Ohm,P-ChannelPowerMOSFETs

Features •12A,100V •rDS(ON)=0.300W •SinglePulseAvalancheEnergyRated •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •RelatedLiterature -TB334,“GuidelinesforSolderingSurfaceMount ComponentstoPCB

SYC

SYC Electronica

IRF9530N

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530N

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9530N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9530NL

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NL

iscP-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤200mΩ(@VGS=-10V;ID=-8.4A) •Advancedtrenchprocesstechnology •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Fastswitchingapplication.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9530NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern

KERSEMI

Kersemi Electronic Co., Ltd.

供应商型号品牌批号封装库存备注价格
ELM
24+
SOT-89
7000
新进库存/原装
询价
ELM
16+
SOT-89
10000
进口原装现货/价格优势!
询价
ELM
17+
SOT-89
6200
100%原装正品现货
询价
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ELM
1922+
SOT-89
35689
原装进口现货库存专业工厂研究所配单供货
询价
ELM
23+
SOT-89
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
23+
7300
专注配单,只做原装进口现货
询价
ELM
2025+
SOT-89
4885
全新原厂原装产品、公司现货销售
询价
23+
7300
专注配单,只做原装进口现货
询价
ELM
24+
SOT-89
620
原装现货假一罚十
询价
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