EDI7F2331MC120BNC中文资料WEDC数据手册PDF规格书

FEATURES

 1Mx32 and 2x1Mx32 Densities

 Based on AMD - AM29F080 Flash Device

 Fast Read Access Time - 80ns

 5V Only Reprogramming

 Sector Erase Architecture

 Uniform sectors of 64 Kbytes each

 Any combination of sectors can be erased

 Also supports full chip erase

 Sector Protection

 Hardware method that disables any combination of

sectors from write or erase operations

 Embedded Erase Algorithms

 Automatically preprograms and erases the chip or

any combination of sectors

 Embedded Program Algorithms

 Automatically programs and verifies data at

specified address

 Data Polling and Toggle Bit feature for detection of

program or erase cycle completion

 Low Power Dissipation

 60mA per Device Active Current

 10μA per Device CMOS Standby Current

 Typical Endurance >100,000 Cycles

 Single 5V ±10 Supply

 CMOS and TTL Compatible Inputs and Outputs

 Commercial and Industrial Temperature Range

 Package

 80 Pin SIMM (JEDEC)

DESCRIPTION

The EDI7F331MC and EDI7F2331MC are organized as one

and two banks of 1Mx32 respectively. The modules are based

on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages

which are mounted on an FR4 substrate.

Both modules offer access times between 80 and 150ns

allowing for operation of high-speed microprocessors without

wait states.