首页 >ECG2029>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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EnhancementModePowerTransistor | EPC-CO Efficient Power Conversion Corporation. | EPC-CO | ||
F2000ERWSERIES | MPD MPD (Memory Protection Devices) | MPD | ||
LowCost,Compact20W,2:1InputRangeDC/DCConverters KeyFeatures: •20WOutputPower •2:1InputVoltageRange •1,500VDCIsolation •Single&DualOutputs •Efficiencyto86 •Compact1.6x2In.Case •-40°Cto+71°COperation •IndustryStandardPin-Out •LowestCost!! | MPD MPD (Memory Protection Devices) | MPD | ||
DC-20GHZMMICSPSTABSORPTIVESWITCH | FILTRONIC Filtronic Compound Semiconductors | FILTRONIC | ||
DC-20GHZMMICSPSTNON-REFLECTIVESWITCH | FILTRONIC Filtronic Compound Semiconductors | FILTRONIC | ||
PNPSiliconGeneralPurposeAmplifierTransistor PNPSiliconGeneralPurposeAmplifierTransistor ThisPNPtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT-723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •ReducesBoardSpace | FS First Silicon Co., Ltd | FS | ||
RubberPush-InBumpers | HeycoHeyco. 海科 | Heyco | ||
SiliconNChannelPowerMOSFETHighSpeedPowerSwitching Features •Lowon-resistance •Capableof2.5Vgatedrive •Lowdrivecurrent •Highdensitymounting | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelPowerMOSFETHighSpeedPowerSwitching Features •Lowon-resistance •Capableof2.5Vgatedrive •Lowdrivecurrent •Highdensitymounting | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelPowerMOSFETHighSpeedPowerSwitching Features •Lowon-resistance •Capableof2.5Vgatedrive •Lowdrivecurrent •Highdensitymounting | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
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