800V, 1A N-Channel MOSFET

文件：243.38 Kbytes 页数：5 Pages

E-CMOS

飞虹高科

丝印：SSF1N80D；Package：TO252；800V, 1A N-Channel MOSFET

文件：243.38 Kbytes 页数：5 Pages

E-CMOS

飞虹高科

800V,1A N-channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ◆Advanced MOSFET process technology\n◆Special designed for PWM, load switching and general purpose applications\n◆Ultra low on-resistance with low gate charge\n◆Fast switching and reverse body recovery\n◆150℃ operating temperature;

E-CMOS

飞虹高科

LCC

移远

上传：深圳市展煜电子有限公司

LCC

移远

上传：深圳市展煜电子有限公司