E114EI

1W,HighIsolationUltra-MiniatureSIPDC/DCConverters

1W,HighIsolationUltra-MiniatureSIPDC/DCConverters KeyFeatures: •1WOutputPower •Ultra-MiniatureSIPCase •3,000VDCIsolation •14StandardModels •>3.5MHourMTBF •3.3V,5V,12V&24VInputs •LOWESTCOST!!

E114I

HighIsolationMiniature,1WSIPDC/DCConverters

HighIsolationMiniature,1WSIPDC/DCConverters KeyFeatures: •1WOutputPower •MiniatureSIPCase •3,000VDCIsolation •CompliestoRFIStandards •>2MHourMTBF •20StandardModels •IndustryStandardPin-Out

EB114-XX-C

TERMINALBLOCK

EB114-XX-C-BK

TERMINALBLOCK

ECG114

DiodesandRectifiers(GeneralPurpose)

EMP114

7.0-9.0GHzPowerAmplifierMMIC

FEATURES •7.0–9.0GHzOperatingFrequencyRange •30.0dBmOutputPowerat1dBCompression •19.0dBTypicalSmallSignalGain •-40dBcOIMD3@EachTonePout20dBm APPLICATIONS •Point-to-pointandpoint-to-multipointradio •MilitaryRadarSystems

F-114X

ChassisMountSingleSecondary

FC114

NPNEpitaxialPlanarSiliconCompositeTransistorSwitchingApplications

NPNEpitaxialPlanarSiliconCompositeTransistor Features ·On-chipbiasresistors(R1=10kΩ,R2=10kΩ) ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC114isformedwithtwochips,beingequivalentt

FDS114E

BandSwitchingDiode

FLUKE-114

ElectricalMultimeter