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FDZ299P

P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET

GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    DS299-Y

  • 制造商:

    Miyama Electric

供应商型号品牌批号封装库存备注价格
nsc
24+
SMD
324554
原装进口现货
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InnoDisk
22+
4000
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KUAN
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13352
一级代理 原装正品假一罚十价格优势长期供货
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INNODISK
17+
SMD
6200
100%原装正品现货
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DS
23+
SSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
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24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
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XUNPU(讯普)
23+
插件,P=2.54mm
426
原装现货/专做开关15年
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TI
2023+
SOT23-3
8700
原装现货
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C&K
20+
开关元件
396
就找我吧!--邀您体验愉快问购元件!
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C&K
2021+
-
499
询价
更多DS299-Y供应商 更新时间2025-5-25 8:01:00