首页>DS1245Y-85>规格书详情
DS1245Y-85中文资料PDF规格书
厂商型号 |
DS1245Y-85 |
参数属性 | DS1245Y-85 封装/外壳为32-DIP 模块(0.600",15.24mm);包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC NVSRAM 1MBIT PARALLEL 32EDIP |
功能描述 | 1024k Nonvolatile SRAM |
文件大小 |
221.24 Kbytes |
页面数量 |
12 页 |
生产厂商 | Dallas Semiconductor Corp. |
企业简称 |
Dallas |
中文名称 | Dallas Semiconductor Corp.官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-4-28 18:56:00 |
DS1245Y-85规格书详情
DESCRIPTION
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times of 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10 VCC operating range (DS1245Y)
■ Optional ±5 VCC operating range (DS1245AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 32-pin DIP package
■ PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
产品属性
- 产品编号:
DS1245Y-85
- 制造商:
Analog Devices Inc./Maxim Integrated
- 类别:
集成电路(IC) > 存储器
- 包装:
管件
- 存储器类型:
非易失
- 存储器格式:
NVSRAM
- 技术:
NVSRAM(非易失性 SRAM)
- 存储容量:
1Mb(128K x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
85ns
- 电压 - 供电:
4.5V ~ 5.5V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
通孔
- 封装/外壳:
32-DIP 模块(0.600",15.24mm)
- 供应商器件封装:
32-EDIP
- 描述:
IC NVSRAM 1MBIT PARALLEL 32EDIP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
23+ |
DIP |
9920 |
原装正品,支持实单 |
询价 | ||
Maxim |
21+ |
32EDIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
MAXIM |
23+ |
MOD |
8888 |
专做原装正品,假一罚百! |
询价 | ||
DALLAS |
07+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
DALLAS |
23+ |
DIP |
96880 |
只做原装,欢迎来电资询 |
询价 | ||
达拉斯 |
B2 |
DIP-32 |
14 |
询价 | |||
MaximIntegratedProducts |
2022 |
ICNVSRAM1MBIT85NS32DIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
DALLAS |
DIP |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
DALLAS |
22+ |
DIP-32 |
2000 |
全新原装品牌专营 |
询价 | ||
DALLAS |
07+ |
DIP |
320 |
询价 |