DRV8300数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

特性 Features

• 100-V Three Phase Half-Bridge Gate driver
• Drives N-Channel MOSFETs (NMOS)
• Gate Driver Supply (GVDD): 5-20V
• MOSFET supply (SHx) support upto 100V

• Integrated Bootstrap Diodes (DRV8300D devices)
• Supports Inverting and Non-Inverting INLx inputs
• Bootstrap gate drive architecture
• 750-mA source current
• 1.5-A sink current

• Supports upto 15s battery powered applications
• Low leakage current on SHx pins (Power Blocks
• Integrated protection features
• BST undervoltage lockout (BSTUV)
• GVDD undervoltage (GVDDUV)