DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

文件：1.25296 Mbytes 页数：26 Pages

TI

德州仪器

DRV8300: Three-Phase BLDC Gate Driver

文件：1.02996 Mbytes 页数：25 Pages

TI

德州仪器

DRV8300: Three-Phase BLDC Gate Driver

文件：1.06698 Mbytes 页数：27 Pages

TI

德州仪器

具有自举二极管的最大 100V 简单三相栅极驱动器

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate dri • 100-V Three Phase Half-Bridge Gate driver \n• Gate Driver Supply (GVDD): 5-20V\n• Integrated Bootstrap Diodes (DRV8300D devices)\n• Bootstrap gate drive architecture \n• 1.5-A sink current\n• Supports upto 15s battery powered applications \n• Integrated protection features \n• GVDD undervoltage (G;

TI

德州仪器

丝印：8300D-Q；Package：TSSOP；DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

文件：1.25296 Mbytes 页数：26 Pages

TI

德州仪器

DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

文件：1.25296 Mbytes 页数：26 Pages

TI

德州仪器

DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

文件：1.25296 Mbytes 页数：26 Pages

TI

德州仪器

DRV8300U: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300UD devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive

文件：1.44836 Mbytes 页数：29 Pages

TI

德州仪器

DRV8300U: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300UD devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive

文件：1.45027 Mbytes 页数：30 Pages

TI

德州仪器

DRV8300U: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300UD devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive

文件：2.67942 Mbytes 页数：34 Pages

TI

德州仪器