N-CHANNEL ENHANCEMENT MODE MOSFET

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美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：130.08 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

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美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • P-Channel MOSFET • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 3) • Qualified to AEC-Q1

文件：311.11 Kbytes 页数：4 Pages

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美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance •

文件：231.54 Kbytes 页数：4 Pages

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美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：238.22 Kbytes 页数：4 Pages

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美台半导体