丝印：H5；Package：U-DFN2020-6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

文件：481.73 Kbytes 页数：8 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：579.24 Kbytes 页数：10 Pages

DIODES

美台半导体

DIODES/美台
X1-DFN1212-3

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

DIODES
SOT-23

DIODES

美台半导体

上传：深圳市科芯源微电子有限公司

DIODES
SOT-523

DIODES

美台半导体

上传：深圳市宇创芯科技有限公司